Robust resistive memory devices using solution-processable metal-coodinated azo aromatics

Journal: NATURE MATERIALS

Author: S. Goswami and Adam J. Matula et al.

Affiliation: NUSNNU-NanoCore, National University of Singapore

Publication date: 2017.10.23

Summarized by Taewon Seo

 

– Structure
v. Molecular view of compound mer-[Ru(L)3](PF6)2 structure (Fig. 1-a)
v. Schematic of device(Fig.1-b)
v. Basic device (type A), second device (type B) (Fig.1-c)
v. Au nanoparticles are sputtered in type B

fig1.png

Fig. 1

 

– Characteristics
v. Current density-voltage characteristics for device A (Fig.2)
v. Current density-voltage characteristics for device B (Fig.2)
v. Nano scale test device(Fig.3)

fig2.png

Fig. 2

fig3.png

Fig. 3

 

– Mechanism
v. Raman spectra measured for thin-film devices (E1 = 1,365cm-1, E2 = 1,313cm-1, E3 = 1,275cm-1) (Fig.4)
v. E1 : neutral, E2 : single-electron reduction, E3 : doubly reduced species
v. Correlation between Raman peaks and film conductance (Fig.5)
v. In the on-state, all molecules are same redox state.

fig4.png

Fig. 4

fig5.png

Fig. 5

 

– Role of counterions
v. LUMO of [Ru(L)3]2+, the strongest π-acceptor ligands (Fig.6)
v. Variation in HOMO and LUMO energy levels (Fig.7)
v. Variation in Electrode and LUMO energy levels (Fig.8)
v. The spatial molecule and counterion results in the formation of dipoles.
v. The applied electric field in the device displace counterions from on pocket to another.

fig6.png

Fig. 6

fig7.png

Fig. 7

fig8.png

Fig. 8

 

– Device performance
v. Read-write pulse sequence for device A & B

fig9afig9bfig9c

Fig. 9

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